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?004 fairchild semiconductor corporation october 2004 RMPA0959 rev. d RMPA0959 RMPA0959 cdma and cdma2000-1x poweredge power amplifier module general description the RMPA0959 power amplifier module (pam) is designed for cellular band amps, cdma and cdma2000-1x applications. the 2 stage pam is internally matched to 50 ? to minimize the use of external components and features a low-power mode to reduce standby current and dc power consumption during peak phone usage. high power-added efficiency and excellent linearity are achieved using our heterojunction bipolar transistor (hbt) process. features single positive-supply operation with low power and shutdown modes 39% cdma efficiency at +28dbm average output power 53% amps mode efficiency at +31dbm output power compact lcc package ( 4.0 x 4.0 x 1.5 mm) internally matched to 50 ? and dc blocked rf input/ output meets cdma2000-1xrtt performance requirements functional block diagram collector bias 1 input stage mmic input stage bias output stage bias bias control collector bias 2 output stage input matching network output matching network interstage match vcc1 (5) rf in (4) vref (1) gnd (3, 7, 9,10,11) rf out (8) vmode (2) vcc=3.4v (nom) vref=2.85v (nom) 824-849 mhz 50 ? i/o vcc2 (6) pa module device
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 absolute ratings 1 notes: 1: no permanent damage with one parameter set at extreme limit. other parameters set to typical values. electrical characteristics 1 notes: 1. all parameters met at tc = +25?, vcc = +3.4v, vref = 2.85v and load vswr 1.2:1, unless otherwise noted. 2. all phase angles. 3. guaranteed by design. symbol parameter ratings units vcc1, vcc2 supply voltages 5.0 v vref reference voltage 2.6 to 3.5 v vmode power control voltage 3.5 v pin rf input power +10 dbm tstg storage temperature -55 to +150 ? symbol parameter min typ max units comments f operating frequency 824 849 mhz cdma operation ssg small-signal gain 25 26.5 db po = 0 dbm gp power gain 26 29 db po = +28 dbm; vmode = 0v 25 db po = +16 dbm; vmode 2.0v po linear output power 28 dbm vmode = 0v 16 dbm vmode 2.0v p aed pae (digital) @ +28 dbm 39 % vmode = 0v p ae (digital) @ +16 dbm 8.5 % vmode 2.0v p aed (digital) @ +16 dbm 20 % vmode 2.0v, vcc = 1.4 v itot high power total current 475 ma po = +28 dbm, vmode = 0v low power total current 130 ma po = +16 dbm, vmode = 2.0v adjacent channel power ratio is-95 a/b modulation a cpr1 ?85 khz offset -55 dbc po = +28 dbm; vmode = 0v -57 dbc po = +16 dbm; vmode 2.0v a cpr2 ?.98 mhz offset -60 dbc po = +28 dbm; vmode = 0v -70 dbc po = +16 dbm; vmode 2.0v amps operation gp power gain 26 27.5 po = +31 dbm p aea power-added ef?iency (analog) 53 % po = +31 dbm general characteristics vswr input impedance 2.0:1 2.5:1 nf noise figure 4 db rx no receive band noise power -134 dbm/hz po +28 dbm; 869 to 894 mhz 2fo-5fo harmonic suppression 3 -30 dbc po +28 dbm s spurious outputs 2,3 -60 dbc load vswr 5.0:1 ruggedness w/ load mismatch 3 10:1 no permanent damage. tc case operating temperature -30 85 ? dc characteristics iccq quiescent current 62 ma vmode 2.0v iref reference current 5 8 ma po +28 dbm icc(off) shutdown leakage current <1 5 ua no applied rf signal.
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 recommended operating conditions symbol parameter min typical max units f operating frequency 824 849 mhz vcc1, vcc2 supply voltage 3.0 3.4 4.2 v vref reference voltage (operating) (shutdown) 2.7 0 2.85 3.1 0.5 v v vmode bias control voltage (low-power) (high-power) 1.8 0 2.0 3.0 0.5 v v p out linear output power (high-power) (low-power) +28 +16 dbm dbm tc case operating temperature -30 +85 ?
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 typical characteristics RMPA0959 cellular 4x4 pam, pout = 28dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 0v, tc = 25c RMPA0959 cellular 4x4 pam, pout = 28dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 0v, tc = 25c RMPA0959 cellular 4x4 pam, pout = 31dbm, amps mode vcc = 3.4, vref = 2.85, vmode = 0v, tc = 25c RMPA0959 cellular 4x4 pam, pout = 31dbm, amps mode vcc = 3.4, vref = 2.85, vmode = 0v, tc = 25c RMPA0959 cellular 4x4 pam, pout = 16dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 2.0v, tc = 25c RMPA0959 cellular 4x4 pam, pout = 16dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 2.0v, tc = 25c RMPA0959 cellular 4x4 pam, pout = 28dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 0v, tc = 25c 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 30.0 824 836.5 849 824 836.5 849 frequency (mhz) 824 836.5 849 frequency (mhz) 824 836.5 849 frequency (mhz) frequency (mhz) 824 836.5 849 frequency (mhz) 824 836.5 849 frequency (mhz) 824 836.5 849 frequency (mhz) gain (db) gain (db) 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 pae (%) pae (%) pae (%) -58.0 -56.0 -54.0 -52.0 -50.0 -48.0 RMPA0959 cellular 4x4 pam, pout = 28dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 0v, tc = 25c 824 836.5 849 frequency (mhz) -64 -62 -60 -58 -56 -54 acpr1 (dbc) acpr2 (dbc) 46.0 47.0 48.0 49.0 50.0 51.0 52.0 53.0 54.0 55.0 56.0 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 30.0 6.0 7.0 8.0 9.0 10.0 11.0 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 gain (db) RMPA0959 cellular 4x4 pam, pout = 16dbm, is95 mod. vcc = 3.4, vref = 2.85, vmode = 2.0v, tc = 25c 824 836.5 849 frequency (mhz) -65.0 -63.0 -61.0 -59.0 -57.0 -55.0 acpr1 (dbc)
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 typical characteristics (continued) efficiency improvement applications in addition to high-power/low-power bias modes, the efficiency of the pa module can be significantly increased at backed-off rf power levels by dynamically varying the supply voltage (vcc) applied to the amplifier. since mobile handsets and power amplifiers frequently operate at 10-20 db back-off, or more, from maximum rated linear power, battery life is highly dependent on the dc power consumed at antenna power levels in the range of 0 to +16dbm. the reduced demand on transmitted rf power allows the pa supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for cdma modulation with excellent margin. high-efficiency dc-dc converters are now available to implement switched-voltage operation. the following charts show measured performance of the pa module in low-power mode (vmode = +2.0v) at +16dbm output power and over a range of supply voltages from 3.4v nominal down to 1.2v. power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (vcc = 1.2v) while maintaining a typical acpr1 of ?2dbc and acpr2 of less than ?1dbc. operation at even lower levels of vcc supply voltage are possible with a further restriction on the maximum rf output power. the pa module can be biased at a supply voltage of as low as 0.7v with an efficiency as high as 10- 12 percent at +8dbm output power. excellent signal linearity is still maintained even under this low supply voltage condition. RMPA0959 cellular 4x4 pam, pout = 16dbm, is95 mod. vcc = 3.4v, vref = 2.85v, vmode = 2.0v, tc = 25c, RMPA0959 cellular 4x4 pam frequency = 836.5mhz, vcc = 3.4v, vref = 2.85v -80.0 -78.0 -76.0 -74.0 -72.0 -70.0 824 836.5 849 frequency (mhz) pout (dbm) acpr2 (dbc) 0 50 100 150 200 250 300 350 400 450 500 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 icc total (ma) vmode = 0v vmode = 2.0v rm pa 0959 vref = 2.85v, pout = 16dbm, vmode = 2.0v -56.0 -54.0 -52.0 -50.0 -48.0 -46.0 -44.0 -42.0 -40.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) acpr1 (dbc) RMPA0959 vref = 2.85v, pout = 16dbm, vmode = 2.0v -80.0 -75.0 -70.0 -65.0 -60.0 -55.0 -50.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 v cc (v) acpr2 (dbc) rmpa 0959 vr ef = 2.85v, pout = 16dbm, vmode = 2.0v 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2 .4 2.6 2.8 3. 03.23.43.6 vcc (v) pae (%) rm pa 0959 vref = 2.85v, pout = 16dbm, vmode = 2.0v 20.0 22.0 24.0 26.0 28.0 30.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) gain (db)
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 efficiency improvement applications (continued) rmpa 0959 vr ef = 2.85v, pout = 12dbm, vmode = 2.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) pae (%) rm pa 0959 vref = 2.85v, pout = 12dbm, vmode = 2.0v 20.0 22.0 24.0 26.0 28.0 30.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) gain (db) rmpa 0959 vref = 2.85v, pout = 12dbm, vmode = 2.0v -5 6.0 -5 4.0 -5 2.0 -5 0.0 -4 8.0 -4 6.0 -4 4.0 -4 2.0 -4 0.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) acpr1 (dbc) rmpa 0959 vref = 2.85v, pout = 12dbm, vmode = 2.0v -82.0 -77.0 -72.0 -67.0 -62.0 -57.0 -52.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) acpr2 (dbc) rmpa 0959 vref = 2.85v, pout = 8dbm, vmode = 2.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 1.0 1.2 1.4 1 .6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) pae (%) rm pa 0959 vref = 2.85v, pout = 8dbm, vmode = 2.0v 20.0 22.0 24.0 26.0 28.0 30.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) gain (db) rmpa 0 959 vr ef = 2. 85 v, pout = 8dbm, vmode = 2.0v -70.0 -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 1.0 1.2 1.4 1.6 1. 82.02.22.42.62.83.03.23.43.6 vcc (v) acpr1 (dbc) rmpa 0959 vref = 2.85v, pout = 8dbm, vmode = 2.0v -90.0 -85.0 -80.0 -75.0 -70.0 -65.0 -60.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 vcc (v) acpr2 (dbc)
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 efficiency improvement applications (continued) rm pa 0959 cellular 4x4 pam p out = 16dbm, vref = 2. 85v, tc = 25c, vmode = 2.0v 0.0 5.0 10.0 15.0 20.0 25.0 30.0 824 836.5 849 frequency (mhz) pae (%) vcc = 1.3v vcc = 1.5v vcc = 2.0v vcc = 3.0v vcc = 3.4v rm pa 0959 cellular 4x4 pam po ut = 16dbm, vref = 2.85v, tc = 25c, vmode = 2.0v 20.0 22.0 24.0 26.0 28.0 30.0 824 8 36.5 8 49 frequen cy (mhz) gain (db ) vcc = 1.3v vcc = 1.5v vcc = 2.0v v cc = 3.0v vcc = 3.4v rm pa 0959 cellular 4x4 pam po ut = 16dbm, vref = 2.85v, tc = 25c, vmode = 2.0v - 60.0 - 58.0 - 56.0 - 54.0 - 52.0 - 50.0 - 48.0 - 46.0 - 44.0 - 42.0 - 40.0 824 836.5 849 frequency (mhz) acpr1 (dbc) vcc = 1.3v vcc = 1.5v vcc = 2.0v vcc = 3.0v vcc = 3.4v rm pa 0959 cellular 4x4 pam pout = 16dbm, vr ef = 2.85v, tc = 25c, vmode = 2.0v - 74.0 - 72.0 - 70.0 - 68.0 - 66.0 - 64.0 - 62.0 - 60.0 - 58.0 - 56.0 - 54.0 824 836.5 849 frequency (mhz) acpr2 (dbc) vcc = 1.3v vcc = 1.5v vcc = 2.0v v cc = 3.0v vcc = 3.4v
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 signal descriptions evaluation board layout materials and dc turn-on sequence dc turn on sequence: 1) vcc1 = vcc2 = 3.4v (typical) 2) vref = 2.85v (typical) 3) high-power: vmode = 0v (pout > 16dbm) low-power: vmode = 2.0v (pout < 16dbm) pin # symbol description 1 vref supply voltage to input stage 2 vmode rf input signal 3 gnd ground 4 rf in high-power/low-power mode control 5 vcc1 reference voltage 6 vcc2 supply voltage to output stage 7 gnd ground 8 rf out rf output signal 9 gnd ground 10 gnd ground 11 gnd paddle ground qty. item no. part number decription vendor 11 g507548-1 v2 pc, board fairchild 22 #142-0701-841 sma connector johnson 53 #234d-5211tn terminals 3m ref 4 g57583 assembly, RMPA0959 fairchild 25 grm39x7r102k50v 1000pf capacitor (d603) murata 25 (alt) ecj-1vb1h1d2k 1000pf capacitor (d603) panasonic 26 c3216x5r1a335m 3.3 ? capacitor (1206) tdk 17 grm39y5v104z16v 0.1? capacitor (0603) murata 17 (alt) ecj-1vbc104k 0.1? capacitor (0603) panasonic 18 grm39x7r331k50v 330pf capacitor (0603) murata a/r 9 sn83 solder paste indium corp. a/r 10 sn86 solder paste indium corp. 1 4 5 3 7 6 8 2 5 6
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 evaluation board schematic 4 5 6 8 3,7,9,10 sma1 rf in sma2 rf out vcc1 vcc2 (package base) 50 ohm trl 50 ohm trl 3.3 f 1 vref 0959 ywwxx 3.3 f 330 pf 1000 pf 1000 pf 0.1 f 2 vmode 11
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 package outline 0959 ywwxx 0959 ywwxx 1 i/o 1 indicator top view front view bottom view detail a. typ. (4.00mm 1.60mm max. .30mm typ. .18mm 3.65mm .85mm typ. .25mm typ. 1.08mm 1.84mm 3.50mm typ. see detail a ) square +.100 ?050 2 3 4 5 10 9 8 7 6 11 1 2 .40mm .10mm .10mm .40mm .45mm
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 application information caution: this is an esd sensitive device precautions to avoid permanent device damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. static sensitivity: follow esd precautions to protect against esd damage: ? properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. ? properly grounded conductive wrist strap for each person to wear while handling devices. general handling: handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, & ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. device storage: devices are supplied in heat-sealed, moisture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. device usage: fairchild recommends the following procedures prior to assembly. dry-bake devices at 125? for 24 hours minimum. note: the shipping trays cannot withstand 125? baking temperature. assemble the dry-baked devices within 7 days of removal from the oven. during the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30? if the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. reflow profile ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1- 2?/sec. pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120-150 seconds at 150?. reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. excessive time at temperature can enhance the formation of inter- metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being completely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering temperatures should be in the range 215-220?, with a maximum limit of 225?. cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack- resistant solder joint. the illustration below indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void- free attachment of the heatsink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225? and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed.
?004 fairchild semiconductor corporation RMPA0959 rev. d RMPA0959 figure 1. recommended solder reflow profile 0 20 40 60 80 100 120 140 deg ( c) time (sec) 10 sec 183 c 1 c/sec 1 c/sec soak at 150 c for 60 sec 45 sec (max) above 183 c 160 180 200 220 240 060 120 180 240 300
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i13 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?

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